Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Tungsten film deposition by hydrogen atom reaction with WF sub 6

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
DOI:https://doi.org/10.1116/1.577382· OSTI ID:5566335
;  [1];  [2]
  1. Department of Chemistry, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (USA)
  2. Department of Chemistry and Physics, Skidmore College, Saratoga Springs, New York 12866 (USA)

The formation of tungsten films using WF{sub 6} and molecular hydrogen, H{sub 2}, usually requires elevated temperatures. Using the reaction of hydrogen atoms with WF{sub 6}, tungsten atoms can be produced in a gas phase reaction. The atoms then deposit in a near-room temperature process resulting in the formation of tungsten films. The W atoms were measured {ital in} {ital situ} by atomic absorption spectroscopy during the chemical vapor deposition (CVD) process. The deposited W films were characterized by Auger electron spectroscopy and Rutherford backscattering spectrometry. Surface morphology of the films was studied using scanning electron microscopy. The deposited films were highly adherent to various substrates, including Teflon. The resistivity of the W films was measured and found {ge}9 {mu}{Omega} cm. This method allows deposition of high quality films and has two advantages compared to conventional CVD or plasma-enhanced CVD (PECVD): (1) film growth at low temperatures and (2) deposition in a plasma-free environment.

OSTI ID:
5566335
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 9:3; ISSN 0734-2101; ISSN JVTAD
Country of Publication:
United States
Language:
English