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Selective tungsten deposition: Temperature-programmed studies on silicon, silicon dioxide, and tungsten surfaces

Thesis/Dissertation ·
OSTI ID:5432113
Selective tungsten chemical vapor deposition (CVD) is a technique which has shown considerable promise for the semiconductor manufacturing industry due to tungsten's physical properties and its ability to be deposited in a spatially selective manner. Routine employment of selective tungsten deposition has been impeded by a lack of knowledge about processes by which selectivity is lost. In order to better understand the cause of selectivity loss and the chemistry of selective tungsten CVD, the interactions of WF{sub 6} on SiO{sub 2}, Si, and W surfaces were studied in ultra high vacuum (UHV) using Temperature Programmed Reaction Spectroscopy. These experiments revealed that WF{sub 6} is capable of reacting with a native oxide surface even at low temperatures. Tungsten oxyfluorides or silicon oxyfluorides desorption signals were not observed from either thick thermal or thin native oxide surfaces. On Si(100) multiple overlapping WF{sub 6} desorption peaks were observed. These chemisorption peaks shifted to higher temperatures with increasing exposure, and are believed to be due to the decomposition of a W-Si-F corrosion layer. Hydrogen did not adsorb on silicon surfaces containing appreciable amounts of tungsten. Tungsten and silicon rapidly interdiffused in tungsten films grown in situ by silicon reduction. Silicon on or in these in situ W films was more reactive than clean, tungsten-free silicon. Experiments on polycrystalline tungsten revealed that WF{sub 6} adsorption is partially irreversible.
Research Organization:
Arizona State Univ., Tempe, AZ (United States)
OSTI ID:
5432113
Country of Publication:
United States
Language:
English