Chemical vapor deposition of tungsten on silicon and silicon oxide studied with soft x-ray photoemission
The growth of tungsten films on silicon and oxidized silicon surfaces via the silicon reduction of WF/sub 6/ was studied with soft x-ray photoemission. The films were grown in ultra-high vacuum and analyzed in situ. It was found that the growth on clean Si proceeds via diffusion of Si atoms through the W film to the surface, so that the silicon atoms become available for the reduction reaction. Post-fluorination of these films via XeF/sub 2/ was performed in order to ascertain the structural details and to investigate further the role of fluorine in the growth process. Silicon oxide surfaces were prepared and subsequently exposed to WF/sub 6/. It was found that a fully formed SiO/sub 2/ surface is inert with respect to WF/sub 6/, but that a partially formed oxide will permit partial WF/sub 6/ dissociation.
- Research Organization:
- IBM T.J. Watson Research Center, Box 218, Yorktown Heights, NY 10598
- OSTI ID:
- 6801973
- Report Number(s):
- CONF-8711124-
- Journal Information:
- AIP Conf. Proc.; (United States), Journal Name: AIP Conf. Proc.; (United States) Vol. 167:1; ISSN APCPC
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101* -- Metals & Alloys-- Preparation & Fabrication
BINDING ENERGY
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELEMENTS
EMISSION
ENERGY
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
KINETICS
METALS
OXIDES
OXYGEN COMPOUNDS
PHOTOEMISSION
REACTION KINETICS
REFRACTORY METAL COMPOUNDS
SECONDARY EMISSION
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SORPTIVE PROPERTIES
SURFACE COATING
SURFACE PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN FLUORIDES