Kinetics and mechanism of selective tungsten deposition by LPCVD

Journal Article · Thu Oct 31 23:00:00 EST 1985 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2113664· OSTI ID:6145396

Pauleau, Y; Lami, Ph

Tungsten films have been deposited selectively on oxide-patterned silicon wafers by the H/sub 2/ reduction of WF/sub 6/ in WF/sub 6//sup -/H/sub 2/ and WF/sub 6//sup -/H/sub 2//sup -/Ar gas flow systems. The deposition rate of films was investigated a a function of reactant partial pressures. The reaction orders with respect to WF/sub 6/ and H/sub 2/ are zero and one-half, respectively. Under given experimental conditions, the growth rate of the selectively deposited W films was reduced by 32% when the deposition area increased by a factor of 10-100. This decrease in growth rate can be attributed to the effect of HF on the surface reaction. The selective nature of the process deteriorates with increasing deposition rate, WF/sub 6/ partial pressure, H/sub 2/ partial pressure, or deposition time. The loss of selectivity seems to be linked to an increase in HF partial pressure in the reactor.

• Research Organization: Centre National d'Etudes des Telecommunications, Meylan
• OSTI ID: 6145396
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 132:11; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
420300 -- Engineering-- Lasers-- (-1989)
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DEPOSITION
ELEMENTS
FILMS
FLUID FLOW
FLUORIDES
FLUORINE COMPOUNDS
GAS FLOW
HALIDES
HALOGEN COMPOUNDS
HYDROGEN
KINETICS
MATERIALS
METALS
NONMETALS
PRESSURE DEPENDENCE
REACTION KINETICS
REDUCTION
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SURFACE COATING
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN FLUORIDES