Mechanism for chemical-vapor deposition of tungsten on silicon from tungsten hexafluoride
The mechanism for the growth of tungsten films on silicon substrates with the use of low-pressure chemical-vapor deposition from WF/sub 6/ was studied with soft-x-ray photoemission by growing films in situ. The dissociative chemisorption of WF/sub 6/ on Si(111) was found to be complete, even at room temperature. The reaction is self-poisoning at room temperature, however, as the fluorine liberated from WF/sub 6/ ties up the active Si sites responsible for the dissociation. The mechanism for continued growth of tungsten films at elevated temperature was determined to proceed via Si diffusion through the layer towards the surface. Post-fluorination of these films via XeF/sub 2/ was employed as a means for illustrating their morphology.
- Research Organization:
- IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
- OSTI ID:
- 5220358
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:11; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL GROWTH
DATA
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
EXPERIMENTAL DATA
FABRICATION
HIGH TEMPERATURE
INFORMATION
IONIZING RADIATIONS
METALS
NUMERICAL DATA
PHOTOEMISSION
RADIATIONS
SECONDARY EMISSION
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SOFT X RADIATION
SURFACE COATING
TRANSITION ELEMENTS
TUNGSTEN
VAPOR DEPOSITED COATINGS
X RADIATION