Kinetics of the tungsten hexafluoride-silane reaction for the chemical vapor deposition of tungsten
In this study, the kinetics of the low-pressure chemical vapor deposition (LPCVD) of tungsten by silane reduction of tungsten hexafluoride on Si(100) surfaces was studied. A single-wafer, cold-wall reactor was sued for the experiments. The SiH[sub 4]/WF[sub 6] ratio was 1.0. The pressure and temperature range were 1-10 torr and 137-385[degree]C, respectively. Kinetic data were obtained in the absence of mass-transfer effects. The film thicknesses were measured by gravimetry. Scanning electron microscopy (SEM), Auger electron spectroscopy (AES), x-ray diffraction (XRD), and resistivity measurements were used to analyze the W films. For the horizontal substrate position and 4-minute reaction times, the apparent activation energies were determined to be 0.35 eV/atom for 10 torr, 0.17 eV/atom for 3 torr, and 0.08 eV/atom for 1 torr. Lower temperatures and higher pressures produced porous films, while higher temperatures and lower pressures resulted in continuous films with smoother surfaces. As the Si-W interface, a W(110) preferential orientation was observed. As the W films grew thicker, W orientation switched from (110) to (100). Apparent activation energy seems to change with thickness.
- Research Organization:
- Montana State Univ., Bozeman, MT (United States)
- OSTI ID:
- 7019704
- Country of Publication:
- United States
- Language:
- English
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360101* -- Metals & Alloys-- Preparation & Fabrication
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRONIC CIRCUITS
ELEMENTS
FILMS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
INTEGRATED CIRCUITS
METALS
MICROELECTRONIC CIRCUITS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SUBSTRATES
SURFACE COATING
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN FLUORIDES