Low-loss GaAs/AlGaAS optical waveguides on InP substrates

Journal Article · Wed Jan 31 23:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.47065· OSTI ID:7171365

Deri, R J; Bhat, R; Harbison, J P; Seto, M; Yi-Yan, A; Florez, L T; Koza, M; Lo, Y H ^[1]

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1. Bellcore, Redbank, NJ (US)

The authors demonstrate that waveguide losses in lattice- mismatched GaAs-on-InP structures can be significantly reduced using an appropriate buffer layer. Low losses (typically 3 dB/cm, with best results below 1 dB/cm) are achieved at 1.52 {mu}m wavelength for samples grown by organometallic chemical vapor deposition.

• OSTI ID: 7171365
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:2; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
440600 -- Optical Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ENERGY LOSSES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LOSSES
MATERIALS TESTING
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SUBSTRATES
SURFACE COATING
TESTING
WAVEGUIDES