Low-loss GaAs optical waveguides formed by lateral epitaxial growth over oxide

Journal Article · Sat Feb 28 23:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92352· OSTI ID:6830594

Leonberger, F J; Bozler, C O; McClelland, R W; Melngailis, I

We report the successful demonstration of a new type of single-mode semiconductor waveguide, an oxide-confined optical waveguide, that has lower loss and should have a smaller allowable bend radius than previously reported structures. The waveguides are formed by a new technique of lateral epitaxial growth of single-crystal GaAs over an SiO/sub 2/ film. Rib waveguides formed on these epitaxial layers have SiO/sub 2/ as the lower confining layer and thus have better confinement than comparable all-semiconductor structures. Losses of only 2.3 dB/cm (0.54 cm/sup -1/) have been measured at 1.06 ..mu..m.

• Research Organization: Massachusetts Inst. of Tech., Lexington
• OSTI ID: 6830594
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL GROWTH
CRYSTALS
ELEMENTS
ENERGY LOSSES
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LOSSES
MATERIALS
MONOCRYSTALS
OSCILLATION MODES
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
WAVEGUIDES