S -bend loss in disorder-delineated GaAs heterostructure laser waveguides with native and blue shifted active regions

Journal Article · Mon Aug 20 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103431· OSTI ID:6376753

Tang, T; Swanson, P; Herzinger, C; Miller, L M; Cockerill, T M; Bryan, R P; DeTemple, T A; Coleman, J J ^[1]

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1. Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL (USA) Engineering Research Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana, IL (USA)

The routing ability of waveguide {ital S}-bend structures patterned by SiO{sub 2} impurity induced layer disordering of a single GaAs quantum well graded barrier laser structure is investigated. For a raised-cosine bend with 100 {mu}m offset guides, the measured transition length for 3 dB loss was less than 300 {mu}m for near single mode guides of 1 {mu}m width. In addition, vacancy-induced disordering of the native quantum well region is investigated and is shown to increase the band gap to a point where the material is low loss for radiation generated by the laser. The 3 dB length for these blue shifted cores actually decreased to about 230 {mu}m, a fact attributed to reduced mode conversion.

• OSTI ID: 6376753
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:8; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ENERGY GAP
ENERGY LOSSES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
LOSSES
MODULATION
OPTICAL MODES
OSCILLATION MODES
PNICTIDES
POINT DEFECTS
POWER LOSSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
VACANCIES
WAVEGUIDES