Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy

Journal Article · Mon Apr 04 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99178· OSTI ID:5386114

Choi, H K; Lee, J W; Salerno, J P; Connors, M K; Tsaur, B; Fan, J C.C.

Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm/sup 2/.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
• OSTI ID: 5386114
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:14; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
ENERGY
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
THRESHOLD CURRENT
THRESHOLD ENERGY
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY