Room-temperature continuous operation of GaAs/AlGaS lasers grown on Si by organometallic vapor-phase epitaxy
Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 micron thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 microns. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%.
- Research Organization:
- Massachusetts Inst. of Tech., Lexington, MA (USA). Lincoln Lab.
- OSTI ID:
- 6018546
- Report Number(s):
- AD-A-228190/5/XAB; JA--6413; CNN: F19628-90-C-0002
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426002* -- Engineering-- Lasers & Masers-- (1990-)
AMBIENT TEMPERATURE
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CURRENTS
DENSITY
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
FABRICATION
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GASES
HEATING
LASER CAVITIES
LASERS
LAYERS
MOLECULAR BEAMS
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
PULSES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SOLID STATE LASERS
SUBSTRATES
THRESHOLD CURRENT
VAPOR PHASE EPITAXY
VAPORS