Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy

Technical Report · Mon Apr 04 00:00:00 EDT 1988

OSTI ID:6808624

Choi, H K; Lee, J W; Salerno, J P; Connors, M K; Tsaur, B Y

Low-threshold double-heterostructure ridge-waveguide lasers were fabricated in GaAs/A1GaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/sq. cm.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• OSTI ID: 6808624
• Report Number(s): AD-A-194858/7/XAB; JA-6064
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
DENSITY
EFFICIENCY
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
PULSES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
VAPOR PHASE EPITAXY