Integrated optoelectronic circuits utilizing InGaAsP grown by molecular beam epitaxy (erbium doping of MBE GaAs). Final report, 1 April 1985-31 December 1986

Technical Report · Thu Jan 01 04:00:00 EST 1987

OSTI ID:7167980

Meeks, E L

A study of erbium doping of molecular beam epitaxy(MBE)-grown gallium arsenide layers was initiated. The low-temperature photoluminescence of Er in GaAs was confirmed and the growth conditions necessary to produce Er-doped layers were established. Secondary ion mass spectrometry (SIMS) data on the MBE-grown GaAs:Er doped layers confirm the presence of Er in the layers and the increase in Er doping with source temperature. Photoluminescence measurements on three samples of MBE-grown GaAs:Er layers were very interesting. There is no evidence of any broad background observed in ion-implanted samples. The intense and sharply structured photoluminescence of MBE grown Er-doped GaAs centered around 1.54 micrometers was confirmed.

• Research Organization: Georgia Inst. of Tech., Atlanta (USA). Research Inst.
• OSTI ID: 7167980
• Report Number(s): AD-A-192269/9/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
DOCUMENT TYPES
ELECTRONIC CIRCUITS
ELEMENTS
EPITAXY
ERBIUM
ERBIUM IONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTEGRATED CIRCUITS
ION IMPLANTATION
IONS
LAYERS
LOW TEMPERATURE
LUMINESCENCE
MANUFACTURING
METALS
MICROELECTRONIC CIRCUITS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
PROGRESS REPORT
RARE EARTHS
SAMPLING