Luminescence study of ion-implanted and MBE-grown Er-doped GaAs and Al{sub x}Ga{sub 1-x}As

Thesis/Dissertation · Thu Dec 31 04:00:00 EST 1992

OSTI ID:121338

Colon, J E

The excitation and de-excitation mechanisms of the Er{sup 3+} emissions near 1.54 {mu}m from ion implanted and MBE-grown GaAs:Er and Al{sub x}Ga{sub 1-x}As:Er were studied through photoluminescence, lifetime measurements, and selective excitation luminescence as a function of Er concentration, Al mole fraction, n- and p-type doping level, and annealing temperature. It was found that there are multiple Er-related luminescence centers in ion implanted and MBE-grown GaAs:Er and Al{sub x}Ga{sub 1-x}As:Er. Lifetime measurments showed that the decay of the 1.54 {mu}M emission is mainly a single exponenial decay with a charateristic lifetime of approximately 1 msec. The Al{sub x}Ga{sub 1-x}As:Er samples showed in addition to the near 1.54 {mu}m emissions, various sharp emissions near 988 nm, and they were assigned to the intra-4f-shell transition between the {sup 4}I{sub 11/2} excited state and the {sup 4}I{sub 15/2} ground state of Er{sup 3+}. In addition, O and Er co-doping studies were done, and it was found that for Al{sub x}Ga{sub 1-x}As, the Er{sup 3+} emissions from the co-doped samples were consistently much stronger than those from the Er-doped samples, but the Er{sup 3+} emissions from GaAs:Er were not enhanced by the O co-doping. The enhancement of the Er{sup 3+} emissions from Al{sub x}Ga{sub 1-x}As:(Er + O) was attributed to the formation of an Er-Al-O complex.

• Research Organization: Air Force Inst. of Tech., Wright-Patterson AFB, OH (United States)
• OSTI ID: 121338
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ALUMINIUM ARSENIDES
DOPED MATERIALS
ERBIUM
GALLIUM ARSENIDES
ION IMPLANTATION
LUMINESCENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE