Spectroscopic analysis of the NIR emission in Tm implanted Al{sub x}Ga{sub 1-x}N layers

Journal Article · Sun Aug 28 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4961931· OSTI ID:22598829

Esteves, T. C.; Santos, N. F.; Ben Sedrine, N.; Rino, L.; Neves, A. J.; Monteiro, T. ^[1]; Fialho, M.; Lorenz, K.; Alves, E. ^[2]

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1. Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)
2. IPFN, Instituto Superior Técnico, Universidade de Lisboa, Campus Tecnológico e Nuclear, EN10, 2695-066 Bobadela LRS (Portugal)

Al{sub x}Ga{sub 1-x}N samples, with different AlN molar fractions, x = 0, 0.15, 0.77, and 1, grown by halide vapor phase epitaxy were implanted with Tm ions. Photoluminescence (PL) measurements revealed that after thermal annealing all the samples exhibit intraionic Tm{sup 3+} luminescence. In samples with x > 0, the low temperature emission is dominated by the lines that appear in the near infrared (NIR) spectral region, corresponding to the overlapped {sup 1}G{sub 4} → {sup 3}H{sub 5} and {sup 3}H{sub 4} → {sup 3}H{sub 6} multiplet transitions. A detailed spectroscopic analysis of NIR emission of the thulium implanted and annealed Al{sub x}Ga{sub 1-x}N layers is presented by using temperature dependent steady-state PL, room temperature PL excitation, and time resolved PL. The results indicate that the excitonic features sensitive to the alloy disorder are involved in the excitation population processes of the Tm{sup 3+} luminescence and the highest thermal stability for the NIR emission occurs for the AlN:Tm sample.

• OSTI ID: 22598829
• Journal Information: Journal of Applied Physics, Vol. 120, Issue 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ANNEALING
EXCITATION
GALLIUM NITRIDES
HALIDES
ION IMPLANTATION
LAYERS
PHOTOLUMINESCENCE
STEADY-STATE CONDITIONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
THULIUM
THULIUM IONS
TIME RESOLUTION
VAPOR PHASE EPITAXY