Optical doping of Al{sub x}Ga{sub 1-x}N compounds by ion implantation of Tm ions
- IST/ITN, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, EN10, 2696-953 Sacavem (Portugal)
Al{sub x}Ga{sub 1-x}N (0<=}1) samples grown by halide vapor phase epitaxy on (0001) sapphire were implanted with Tm ions to optimize the conditions to achieve maximum optical efficiency. The ions were implanted under random and channeled orientations with a fluence of 1 Multiplication-Sign 10{sup 15}cm{sup -2}. The damage profile and the defects' nature were investigated by Rutherford Backscattering/Channeling Spectrometry and High Resolution X-ray Diffraction. The structural measurements show a higher resistance of the lattice to irradiation damage with the increase of the AlN content. Results of the angular scans measured along the <0001> axis for samples with AlN contents of 0.15 and 0.77 suggest a relation between the AlN content and Tm specific sites in the lattice. Rapid thermal annealing treatments under N{sub 2} ambient were performed to remove damage and promote optical activation of rare earth intra-4f{sup n} transitions. After annealing the observed intraionic emissions of Tm{sup 3+} ions were characterized by photoluminescence.
- OSTI ID:
- 22075733
- Journal Information:
- AIP Conference Proceedings, Vol. 1496, Issue 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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