MeV implantation studies in LPE (liquid phase epitaxy)-grown GaAs and InP. Final report, 1 October 1987-31 March 1989

Technical Report · Fri Mar 31 04:00:00 EST 1989

OSTI ID:5886974

Park, Y S

Research was conducted on growth and evaluation of high-quality gallium arsenide layers using liquid phase epitaxy (LPE) and on MeV ion-implantation processings of molecular beam epitaxy (MBE) grown GaInAs layers on GaAs and LPE-grown GaAs layers on GaAs. By a novel growth method i.e., isoelectronic doping of LPE GaAs layers with indium, high structural and electrical-quality layers were successfully grown. In the as-grown indium-doped LPE GaAs layers, the etch-pit density, rocking-curve FWHM, and the ideality factor of a Schottky diode improved significantly, showing an optimal In doping density of 2.4 x 10/sup 19/. The effects of MeV-ion bombardment in a strained but partially relaxed GaInAs epitaxial layers on GaAs were systematically investigated. Depending on the state of initial relaxation, film thickness, and incident ion-beam current, the lattice strain changed differently with the increasing ion-beam dose.

• Research Organization: State Univ. of New York, Buffalo, NY (USA). Dept. of Electrical Engineering
• OSTI ID: 5886974
• Report Number(s): AD-A-207220/5/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL GROWTH
DENSITY
DIMENSIONS
DOCUMENT TYPES
ELECTRICAL PROPERTIES
ENERGY RANGE
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION BEAMS
ION IMPLANTATION
LAYERS
LIQUID PHASE EPITAXY
MEV RANGE
MOLECULAR BEAMS
PHYSICAL PROPERTIES
PNICTIDES
PROGRESS REPORT
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
THICKNESS