Characterization of MeV ion-implanted GaInAs/GaAs using x-ray and Raman techniques
Technical Report
·
OSTI ID:5763265
Lattice relaxation, elastic strain, and phonon shifts are studied in as-grown, MeV ion-implanted, and thermally annealed strained GaInAs layers on GaAs(001) substrates. The degree of lattice relaxation for the as-grown samples is discussed in terms of the measured in-plane lattice constants and the calculated critical thickness. For the 15-MeV Cl or 9-MeV P ion-bombarded GaInAs/GaAs, the beam induced elastic strains and beam induced phonon shifts are measured and discussed for samples with different degrees of initial relaxation. Thermal annealing on the as-grown and the ion-implanted GaInAs layers indicates a substantial thermal loss of indium in the thin surface layers and a full recovery of radiation damage in the GaInAs layers by 500 C.
- Research Organization:
- State Univ. of New York, Buffalo, NY (USA). Dept. of Electrical and Computer Engineering
- OSTI ID:
- 5763265
- Report Number(s):
- AD-A-207063/9/XAB
- Country of Publication:
- United States
- Language:
- English
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·
OSTI ID:21120812
Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
DIMENSIONS
ELECTROMAGNETIC RADIATION
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION IMPLANTATION
LATTICE PARAMETERS
LAYERS
MEV RANGE
MEV RANGE 01-10
MEV RANGE 10-100
PHONONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
QUASI PARTICLES
RADIATION EFFECTS
RADIATIONS
RAMAN SPECTRA
RECOVERY
SAMPLING
SPECTRA
SUBSTRATES
SURFACES
THERMAL RADIATION
THICKNESS
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
DIMENSIONS
ELECTROMAGNETIC RADIATION
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION IMPLANTATION
LATTICE PARAMETERS
LAYERS
MEV RANGE
MEV RANGE 01-10
MEV RANGE 10-100
PHONONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
QUASI PARTICLES
RADIATION EFFECTS
RADIATIONS
RAMAN SPECTRA
RECOVERY
SAMPLING
SPECTRA
SUBSTRATES
SURFACES
THERMAL RADIATION
THICKNESS