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Postgrowth annealing of GaInAs/GaAs and GaInAsN/GaAs quantum well samples placed in a proximity GaAs box: A simple method to improve the crystalline quality

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2943157· OSTI ID:21120812
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  1. Optoelectronics Research Centre, Tampere University of Technology, FIN-33101 Tampere (Finland)
The effects of thermal annealing on GaInAs/GaAs and GaInAsN/GaAs quantum wells, grown by molecular beam epitaxy, were investigated. Optical and structural properties were examined upon annealing when the samples had a 200 nm thick SiO{sub 2} cap layer, or were placed in a so-called GaAs box or were left uncapped. The GaAs box gave rise to the strongest photoluminescence without significant blueshift or structural changes at moderate annealing temperature. Capping with SiO{sub 2} impaired the samples and caused a more pronounced blueshift for the GaInAs quantum wells than for the GaInAsN ones. These results consolidate our understanding of the blueshift mechanisms.
OSTI ID:
21120812
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 92; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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