Postgrowth annealing of GaInAs/GaAs and GaInAsN/GaAs quantum well samples placed in a proximity GaAs box: A simple method to improve the crystalline quality
- Optoelectronics Research Centre, Tampere University of Technology, FIN-33101 Tampere (Finland)
The effects of thermal annealing on GaInAs/GaAs and GaInAsN/GaAs quantum wells, grown by molecular beam epitaxy, were investigated. Optical and structural properties were examined upon annealing when the samples had a 200 nm thick SiO{sub 2} cap layer, or were placed in a so-called GaAs box or were left uncapped. The GaAs box gave rise to the strongest photoluminescence without significant blueshift or structural changes at moderate annealing temperature. Capping with SiO{sub 2} impaired the samples and caused a more pronounced blueshift for the GaInAs quantum wells than for the GaInAsN ones. These results consolidate our understanding of the blueshift mechanisms.
- OSTI ID:
- 21120812
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 92; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Rapid thermal annealing of InAs/GaAs quantum dots with a low-temperature-grown InGaP cap layer
Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap
Properties of the SiO{sub 2}- and SiN{sub x}-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence
Journal Article
·
Mon May 15 00:00:00 EDT 2006
· Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
·
OSTI ID:20777194
Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap
Journal Article
·
Mon Oct 15 00:00:00 EDT 2001
· Applied Physics Letters
·
OSTI ID:40277788
Properties of the SiO{sub 2}- and SiN{sub x}-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence
Journal Article
·
Mon Sep 05 00:00:00 EDT 2011
· Applied Physics Letters
·
OSTI ID:22027736