Rapid thermal annealing of InAs/GaAs quantum dots with a low-temperature-grown InGaP cap layer

Journal Article · Mon May 15 04:00:00 EDT 2006 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2165655· OSTI ID:20777194

Jiang, W H; Thompson, D A; Hul'ko, O; Robinson, B J; Mascher, P ^[1]

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1. Centre for Electrophotonic Materials and Devices (CEMD), McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

A single layer of self-assembled InAs quantum dots was grown on a GaAs (001) substrate by gas source molecular-beam epitaxy. The quantum dots were overgrown with 65 nm GaAs, 25 nm InGaP, and a 10 nm GaAs etch-stop layer. This was either uncapped or capped with 100 nm of low-temperature (LT)-grown, lattice-matched InGaP (LT-InGaP) or with a SiO{sub 2} layer or Al{sub 2}O{sub 3} layer. Photoluminescence (PL) measurements were made on samples before and after rapid thermal annealing at 550-900 deg.C and for 15-120 s at 650 deg.C. Samples capped with LT-InGaP showed a significant blueshift of the PL peak wavelength for anneals above 575 deg.C. By comparison, for the SiO{sub 2}-capped and uncapped samples, the net blueshift only becomes significant for anneals >700 deg.C, while an Al{sub 2}O{sub 3} cap actually reduces the blueshift and suppresses the intermixing. It appears that the best conditions for spatially controlling the quantum dot intermixing occur with annealing at low temperatures (600-650 deg.C)

• OSTI ID: 20777194
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 3 Vol. 24; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ANNEALING
COMPARATIVE EVALUATIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K