Quantitative analysis of compositional changes in InGaAs/InGaAsP quantum wells on GaAs induced by intermixing with a low temperature grown InGaP cap layer

Journal Article · Mon Aug 07 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2236202· OSTI ID:20860669

Hulko, O; Thompson, D A; Czaban, J A; Simmons, J G ^[1]

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1. Centre for Emerging Devices and Technologies (CEDT), McMaster University, Hamilton, Ontario L8S 4L8 (Canada)

Energy-dispersive x-ray spectroscopy was used to analyze quantum well intermixing between an InGaAs quantum well (QW) and InGaAsP barriers grown on GaAs induced by a low temperature, molecular beam epitaxy grown, InGaP cap. This cap layer produces an enhanced blueshift of the photoluminescence (PL) wavelength following postgrowth annealing, and degradation of the PL signal. Cross-sectional transmission electron microscopy reveals modification of the whole structure, with formation of arsenic precipitates, broadening, and subsequent disappearance of the QWs in the capped structure. Uncapped samples are relatively unchanged. Increased phosphorus observed in the QW for capped structures confirms the diffusion of phosphorus from the P-rich cap.

• OSTI ID: 20860669
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARSENIC
CHEMICAL ANALYSIS
CRYSTAL GROWTH
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOSPHORUS
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
TRANSMISSION ELECTRON MICROSCOPY
WAVELENGTHS
X-RAY SPECTROSCOPY