Properties of the SiO{sub 2}- and SiN{sub x}-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

Journal Article · Mon Sep 05 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3634046· OSTI ID:22027736

Dahl, J ^[1]; Polojaervi, V; Salmi, J; Guina, M ^[2]; Laukkanen, P ^[1]

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1. Department of Physics and Astronomy, University of Turku, Turku FI-20014 (Finland)
2. Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33101 (Finland)

SiO{sub 2} and SiN{sub x} layers are routinely deposited onto III-V(100) surfaces at different device processing steps. We elucidate these insulator-interface properties with photoemission and photoluminescence (PL) of SiO{sub 2}- and SiN{sub x}-capped GaAs(100) surfaces of GaInAsN/GaAs quantum wells (QWs). Post-growth annealing led to an increase of the QW-PL intensity, of which origin can be clearly linked to the SiO{sub 2} and SiN{sub x} interfaces. Concomitantly, Ga{sub 2}O-related photoemission increased, indicating useful formation of Ga{sub 2}O at both insulator interfaces. Furthermore, higher Ga-oxidation-state emission, identified with Ga diffused into SiO{sub 2} and SiN{sub x}, correlates with the blue-shift of the QW-PL wavelength. Also, interfacial As-As related photoemission was identified.

• OSTI ID: 22027736
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 99; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CRYSTAL GROWTH
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
GALLIUM OXIDES
INDIUM NITRIDES
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
OXIDATION
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPECTRAL SHIFT
SURFACES