Temperature dependence of the photoluminescence emission from In{sub x}Ga{sub 1-x}As quantum wells on GaAs(311) substrates

Journal Article · Mon Dec 15 04:00:00 EST 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3043578· OSTI ID:21180055

Rojas-Ramirez, J S; Hernandez-Rosas, J ^[1]; Goldhahn, R; Moser, P ^[2]; Huerta-Ruelas, J ^[3]; Lopez-Lopez, M ^[4]

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1. Physics Department, Centro de Investigacion y Estudios Avanzados del IPN, Apartado Postal 14-740, Mexico D.F. 07360 (Mexico)
2. Institut of Physics, Technical University Ilmenau, PF 100565, 98684 Ilmenau (Germany)
3. Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada del IPN, Cerro Blanco 141, Col. Colinas del Cimatario, Queretaro Qro. 76090 (Mexico)
4. Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Apartado Postal 1-1010, Queretaro 76000 (Mexico)

We studied the photoluminescence (PL) properties of In{sub 0.2}Ga{sub 0.8}As/GaAs quantum well structures grown by molecular beam epitaxy on (311)-oriented substrates. The structure consists of three quantum wells (QWs) of 100, 50, and 25 A nominal thickness. The temperature dependence of the PL emission from the QWs in the range of 5-250 K is reported. Three models by Varshni, Vina, and Paessler, respectively, were employed to analyze the variation in the excitonic energy transitions as a function of temperature. We compared the excitonic behavior with the band gap temperature dependence of bulk In{sub 0.2}Ga{sub 0.8}As and found a difference, as opposed to the unstrained AlGaAs/GaAs system. We attributed this difference to the modification of the QW energy levels by the quantum confinement Stark effect, which is temperature and well width dependent.

• OSTI ID: 21180055
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 104; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
ENERGY GAP
ENERGY LEVELS
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
STARK EFFECT
SUBSTRATES
TEMPERATURE DEPENDENCE