Photoluminescence properties of a GaN{sub 0.015}As{sub 0.985}/GaAs single quantum well under short pulse excitation

Journal Article · Mon Aug 13 04:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1390484· OSTI ID:40230760

Luo, X D; Xu, Z Y; Ge, W K; Pan, Z; Li, L H; Lin, Y W

Under short pulse laser excitation, we have observed an extra high-energy photoluminescence (PL) emission from GaNAs/GaAs single quantum wells (QWs). It dominates the PL spectra under high excitation and/or at high temperature. By measuring the PL dependence on both temperature and excitation power and by analyzing the time-resolved PL results, we have attributed the PL peak to the recombination of delocalized excitons in QWs. Furthermore, a competition process between localized and delocalized excitons is observed in the temperature-dependent PL spectra under the short pulse excitation. This competition is believed to be responsible for the temperature-induced S-shaped PL shift often observed in the disordered alloy semiconductor system under continuous-wave excitation. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40230760
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 79; ISSN 0003-6951
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
ALLOYS
EXCITATION
EXCITONS
LASERS
PHOTOLUMINESCENCE
PHYSICS
RECOMBINATION
SPECTRA