Growth of GaAs and AlGaAs on Si substrates by atomic hydrogen-assisted MBE (H-MBE) for solar cell applications

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:191104

Okada, Yoshitaka; Kawabata, Akio; Kawabe, Mitsuo ^[1]; Yui, Naomasa; Kawanami, Hitoshi ^[2]

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1. Univ. of Tsukuba, Ibaraki (Japan). Inst. of Materials Science
2. Electrotechnical Lab., Ibaraki (Japan)

The crystalline quality of both GaAs and AlGaAs films grown on Si substrates by atomic hydrogen-assisted low-temperature molecular beam epitaxy (H-MBE) technique have been studied using time-resolved photoluminescence method. An average minority carrier lifetime of {tau} = 1.93 ns has been successfully obtained for n-Al{sub x}Ga{sub 1{minus}x}As (x = 0.2) films on Si grown at a low-temperature of 330 C by H-MBE technique (n = 2 {times} 10{sup 17}cm{sup {minus}3}), and was comparable to those grown on GaAs substrates by the conventional MBE. The role of atomic hydrogen in MBE growth process has been discussed based on the secondary ion mass spectroscopy (SIMS) analysis. The authors have also fabricated GaAs solar cell structures on Si substrates by their technique and their fundamental properties have been briefly discussed.

• OSTI ID: 191104
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDE SOLAR CELLS
ALUMINIUM ARSENIDES
CARRIER LIFETIME
CHEMICAL COMPOSITION
COMPOSITE MATERIALS
DOPED MATERIALS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
HYDROGEN
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SILICON
SPECTRAL RESPONSE