Comparison of MOS capacitor and transistor postirradiation response

Conference · Thu Nov 30 23:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/23.45371· OSTI ID:7167322

McWhorter, P J; Fleetwood, D M; Pastorek, R A; Zimmerman, G T ^[1]

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1. Sandia National Labs., Alburquerque, NM (US)

The postirradiation response of MOS capacitors and transistors fabricated on the same chip has been examined as a function of dose and anneal bias. A variety of analysis techniques are used to evaluate the postirradiation response of these structures, including low and high frequency capacitance-voltage techniques, subthreshold current-voltage techniques, and charge pumping. Though there are changes in the postirradiation energy spectrum of {Delta}D{sub it}, no clear evidence of defect transformation is observed on transistors or capacitors under any conditions examined. Postirradiation response at 80{degrees}C is found to be similar in the two structures for low levels of damage (100 krad). For both structures, interface-trap densities continue to grow following irradiation under these conditions. In contrast, the postirradiation response of capacitors and transistors can differ qualitatively at higher levels of damage (1 Mrad), with interface-traps increasing postirradiation at 80{degrees}C for transistors and annealing for capacitors. These results indicate that capacitor structures may not be suitable for hardness assurance studies that involve elevated temperature irradiations or postirradiation anneals.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7167322
• Report Number(s): CONF-890723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CAPACITORS
CHARGE DISTRIBUTION
CURRENTS
DOSE RATES
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
HARDENING
HEAT TREATMENTS
INTERFACES
IRRADIATION
MOS TRANSISTORS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
QUALITY ASSURANCE
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TEMPERATURE DEPENDENCE
TESTING
THRESHOLD CURRENT
TRANSISTORS
TRAPPING