Surface potential determination in irradiated MOS transistors combining current-voltage and charge pumping measurements

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.685207· OSTI ID:644129

Masson, P ^[1]; Autran, J L; Raynaud, C ^[1]; Flament, O; Paillet, P ^[2]; Chabrerie, C ^[3]

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1. INSA de Lyon, Villeurbanne (France)
2. CEA Centre d`Etudes, Bruyeres-le-Chatel (France)
3. Thomson CSF Communications, Colombes (France)

A method combining charge pumping and current-voltage measurements is presented for determining the surface potential versus gate voltage relationship in irradiated MOS transistors. This technique uses parameter optimization and simple numerical equations. It can be applied even for a high interface state density and for a non-uniform distribution in the silicon bandgap. This makes the method attractive for all studies concerning interface trap characterization or accurate modeling of MOS transistors in subthreshold regime. In this study, this new approach is applied to n-channel transistors irradiated up to 10 Mrad (SiO{sub 2}).

• OSTI ID: 644129
• Report Number(s): CONF-970934--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt3 Vol. 45; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CALCULATION METHODS
ELECTRIC POTENTIAL
MEASURING METHODS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS