Charge-pumping characterization of SiO{sub 2}/Si interface in virgin and irradiated power VDMOSFETs
- Technical Univ., Vienna (Austria). Inst. for Solid State Electronics
- Univ. of Nis (Yugoslavia). Faculty of Electronic Engineering
The applicability of charge-pumping technique to characterize the oxide/silicon interface in standard power Vertical Double-diffused (VD)MOS transistors is studied. Qualitative analysis of the charge-pumping threshold and flat-band voltage distributions in the VDMOS structure, supported with rigorous transient numerical modeling of the charge-pumping effect, shows that the measurements can be carried out in the subthreshold region. This conclusion is confirmed by various experimental results. The characteristics, i.e., charge-pumping current versus gate top level, is studied in detail. The changes in the characteristics after {gamma}-ray irradiation are analyzed. A charge-pumping-based method for separate extraction of interface state density and density of charge trapped in the oxide after irradiation of VDMOSFET`s is proposed. The validity and limitations of the method are studied by experiments and modeling.
- OSTI ID:
- 418062
- Journal Information:
- IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 12 Vol. 43; ISSN 0018-9383; ISSN IETDAI
- Country of Publication:
- United States
- Language:
- English
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