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Interface-state measurements on sos using the charge-pumping technique on gated-diode test structures

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6318728

The radiation-induced interface-state density in CMOS/SOS was measured with the charge-pumping technique using a new gated-diode test structure. The results were compared to the interface-state density measured with the subthreshold slope method in N- and P-channel MOSFET devices after exposure to radiation from a Co-60 source. Experimental results using the two methods on both depleted and non-depleted SOS-substrates were analyzed. With a combination of both methods, the interface-state density at the Si-Sapphire interface could be measured to D/sub it/ = 1.3 x 10/sup 12/eV/sup -1/. The charge-pumping technique can be utilized on SOI material and a direct method of measuring the interface-state density at the interface to the substrate isolation oxide is described. The test structures cam be implemented in a standard CMOS/SOS test die.

Research Organization:
Dept. of Solid State Electronics, Chalmers Univ. of Technology, Goeteborg (SE)
OSTI ID:
6318728
Report Number(s):
CONF-880730-
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
360605 -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
CHALCOGENIDES
CHARGE TRANSPORT
COBALT 60
COBALT ISOTOPES
CORUNDUM
DATA
DENSITY
DOSES
ELEMENTS
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
HARDENING
INFORMATION
INTERFACES
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINERALS
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
MOSFET
NUCLEI
NUMERICAL DATA
ODD-ODD NUCLEI
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
RADIOISOTOPES
SAPPHIRE
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TRANSISTORS
YEARS LIVING RADIOISOTOPES