Effects of total-dose irradiation on Gate-All-Around (GAA) devices

Journal Article · Wed Mar 31 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.212320· OSTI ID:6440237

Colinge, J P; Terao, A ^[1]

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1. Univ. Catholique de Louvain, Louvain-la-Nueve (Belgium)

The response of Gate-All-Around MOS transistors to dose irradiation is quite different from that observed on other types of Silicon-On-Insulator MOSFETs. Indeed, in regular SOI MOSFETs, edge leakage increases substantially faster than the main transistor leakage upon creation of oxide charges due to the irradiation. The GAA MOSFET behaves in the opposite way: the shift of edge threshold voltage upon creation of charges in the oxide is smaller than that of the main transistor. As a result, a kink develops in the subthreshold characteristics of regular SOI MOSFETs upon irradiation, while the original subthreshold of GAA devices disappears when the device is irradiated.

• OSTI ID: 6440237
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:2; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CURRENTS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
FABRICATION
FAILURES
FIELD EFFECT TRANSISTORS
HARDENING
IRRADIATION
LEAKAGE CURRENT
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS