Correlating the radiation response of MOS capacitors and transistors

Journal Article · Fri Nov 30 23:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333529· OSTI ID:5619871

Winokur, P S; Dressendorfer, P V; McWhorter, P J; Schwank, J R; Turpin, D C

A new technique is presented for separating the threshold-voltage shift of an MOS transistor into shifts due to interface states and trapped-oxide charge. Using this technique, the radiation responses of MOS capacitors and transistors fabricated on the same wafer are compared. A good correlation is observed between p-substrate capacitors and n-channel transistors irradiated at 10 V, as well as between n-substrate capacitors and p-channel transistors irradiated at 0 V. These correlations were verified for samples having large variations in the amount of radiation-induced trapped holes and interface states. An excellent correlation is also observed between n-channel capacitors and n-substrate transistors irradiated under positive bias. The use of capacitors separately fabricated on control wafers for potential use in process development or monitoring is clearly demonstrated.

• Research Organization: Sandia National Laboratories, Albuquerque, NM 87185
• OSTI ID: 5619871
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-31:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITORS
CHALCOGENIDES
CORRELATIONS
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
INTERFACES
IRRADIATION
MONITORING
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SUBSTRATES
TRANSISTORS
TRAPPING