Mosfet and MOS capacitor responses to ionizing radiation

Journal Article · Fri Nov 30 23:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333530· OSTI ID:5711871

Benedetto, J M; Boesch, H E

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of ''slow'' states can interfere with the interface-state measurements.

• Research Organization: U.S. Army Electronics Research and Development Command, Harry Diamond Laboratories, Adelphi, MD 20783
• OSTI ID: 5711871
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-31:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITORS
DENSITY
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
INTERFACES
IONIZING RADIATIONS
MOS TRANSISTORS
MOSFET
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS