Ionization radiation induced degradation of MOSFET channel frequency response

Journal Article · Thu Jun 01 00:00:00 EDT 1989 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/23.31097· OSTI ID:5938120

Sharma, U; White, M H

A model for the frequency response degradation of metal-oxide-semiconductor field-effect transistors (MOSFET'S) exposed to ionizing radiation is presented. It is shown that response degradation can be predicted by monitoring a single parameter, the gate-to-channel time-constance tau/sub GC/, which is highly sensitive to the density of interface traps at the silicon-insulator interface. Tau/sub GC/ and its degradation with radiation dose are directly obtained by measuring the small signal impedance of a MOSFET. The measurement technique used in this work also enables the extraction of effective mobility of the inversion layer. Frequency response characteristics of two types of MOSFET's, fabricated using two different gate-insulator technologies and exposed to a total dose of 1 Mrad(Si), are compared.

• Research Organization: Lehigh Univ., Bethlehem, PA (USA). Sherman Fairchild Lab.
• OSTI ID: 5938120
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. 36:3
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MOSFET
PHYSICAL RADIATION EFFECTS
IONIZING RADIATIONS
MONITORING
RADIATION DOSES
DOSES
FIELD EFFECT TRANSISTORS
MOS TRANSISTORS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems