Ionizing radiation effects on power MOSFETS during high speed switching

Journal Article · Wed Dec 01 04:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336403· OSTI ID:6089256

Blackburn, D L; Benedetto, J M; Berning, D W; Galloway, K F

Data on the effects of gamma radiation on the electrical characteristics of power VDMOS transistors are presented. The devices were exposed to radiation while the gate voltage was switching at 100 kHz or while held at a dc voltage. Several drain voltage configurations were also explored. The threshold voltage shifts observed begin to saturate at relatively low doses (about 0.1 Mrad(Si)) for all but the worst case bias (V /SUB G/ = +10 V). The threshold voltage shifts do not show significant dependence on drain voltage. The devices studied appear to be approximately an order of magnitude more efficient in trapping radiation generated holes than would be expected in a state-of-the-art radiation hardened planar MOSFET.

• Research Organization: NBS, Washington, DC 20234
• OSTI ID: 6089256
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 29:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DOSES
ELECTRIC POTENTIAL
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ENERGY
GAMMA RADIATION
HOLES
IONIZING RADIATIONS
MOS TRANSISTORS
MOSFET
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SWITCHING CIRCUITS
THRESHOLD ENERGY
TRANSISTORS
TRAPPING