A CMOS matrix for extracting MOSFET parameters before and after irradiation

Conference · Thu Dec 01 04:00:00 EST 1988 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6177057

Blaes, B R; Buehler, M G; Lin, Y S; Hicks, K A

An addressable matrix of 16 n- and 16 p-MOSFETs has been designed to extract the DC MOSFET parameters for all dc gate bias conditions before and after irradiation. The matrix contains four sets of MOSFETs each with four different geometries that can be biased independently before and after irradiation. Thus the worst-case bias scenarios can be determined. The MOSFET matrix was fabricated at a silicon foundry using a radiation-soft CMOS p-well LOCOS process. Cobalt 60 irradiation results for the n-MOSFETs showed a very low threshold voltage shift of -3mV/krad(Si); whereas, the p-MOSFETs showed 21 mV/krad(Si). The worst-case threshold voltage shift occurred for the n-MOSFET with a gate bias of 5V during anneal, but for the p-MOSFETs, biasing did not affect the shift in the threshold voltage. A parasitic MOSFET dominated the leakage of the n-MOSFET biased with 5V on the gate during irradiation.

• Research Organization: Jet Propulsion Lab., California Institute of Technology, Pasadena, CA (US)
• OSTI ID: 6177057
• Report Number(s): CONF-880730-
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: 35:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELEMENTS
FABRICATION
FIELD EFFECT TRANSISTORS
IRRADIATION
JUNCTIONS
LEAKAGE CURRENT
MATRICES
MOS TRANSISTORS
MOSFET
P-N JUNCTIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
TRANSISTORS