Temperature-induced rebound in power MOSFETS
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:5017602
Enhancement-mode n-channel power MOSFETs were investigated for rebound. They received 300 krad(Si) gamma dose under positive gate bias with source and drain grounded. The irradiated transistors were thermally annealed with all terminals shorted or under positive gate bias with drain and source shorted, at temperatures from 60/sup 0/C to 150/sup 0/C. Threshold voltage rebound was observed for some transistor types under certain experimental conditions.
- Research Organization:
- Semiconductor Electronics Div., National Bureau of Standards, Gaithersburg, MD 20899 (US)
- OSTI ID:
- 5017602
- Report Number(s):
- CONF-8707112-
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-34:6
- Country of Publication:
- United States
- Language:
- English
Similar Records
A CMOS matrix for extracting MOSFET parameters before and after irradiation
The effect of operating conditions on the radiation resistance of VDMOS power FETs
Impact of oxide thickness on SEGR failure in vertical power MOSFETs: Development of a semi-empirical expression
Conference
·
Wed Nov 30 23:00:00 EST 1988
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:6177057
The effect of operating conditions on the radiation resistance of VDMOS power FETs
Journal Article
·
Tue Nov 30 23:00:00 EST 1982
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:5964290
Impact of oxide thickness on SEGR failure in vertical power MOSFETs: Development of a semi-empirical expression
Journal Article
·
Thu Nov 30 23:00:00 EST 1995
· IEEE Transactions on Nuclear Science
·
OSTI ID:203716
Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
DATA
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
GAMMA LOGGING
HEAT TREATMENTS
INFORMATION
MOS TRANSISTORS
MOSFET
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIOACTIVITY LOGGING
SEMICONDUCTOR DEVICES
TEMPERATURE EFFECTS
THERMAL DEGRADATION
TRANSISTORS
WELL LOGGING
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
DATA
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
GAMMA LOGGING
HEAT TREATMENTS
INFORMATION
MOS TRANSISTORS
MOSFET
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIOACTIVITY LOGGING
SEMICONDUCTOR DEVICES
TEMPERATURE EFFECTS
THERMAL DEGRADATION
TRANSISTORS
WELL LOGGING