The effect of operating conditions on the radiation resistance of VDMOS power FETs

Journal Article · Wed Dec 01 04:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336404· OSTI ID:5964290

Seehra, S S; Slusark, W J

The effect of gamma radiation on the threshold voltage, ''On'' resistance, and breakdown voltage of VDMOS Field Effect Transistors operating under various bias conditions is presented. The drain-source breakdown voltage and the ''On'' resistance of these devices have been found to be unaffected by irradiating the devices to a total dose of 4x10/sup 4/ rads. The electrical parameter affected by irradiation is the gate threshold voltage. The threshold voltage shift at a particular radiation level for devices biased with both gate and drain voltage has been determined to be dependent only on the magnitude of the gate voltage during irradiation. This shift has been found to be independent of the drain-source voltage (30-80 volt range) and operating frequency (10-50kHz range). Practically no annealing occurs at room temperature. However, these devices have been found to recover to within 10% of their initial threshold voltage after annealing at 200/sup 0/C under gate bias of 18 volts for 22 hours.

• Research Organization: RCA Astro Electronics, Princeton, NJ 08540
• OSTI ID: 5964290
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 29:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BREAKDOWN
DOSES
ELECTRIC POTENTIAL
ELECTROMAGNETIC RADIATION
ENERGY
FIELD EFFECT TRANSISTORS
GAMMA RADIATION
HEAT TREATMENTS
IONIZING RADIATIONS
IRRADIATION
MOS TRANSISTORS
MOSFET
OPERATION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
THRESHOLD ENERGY
TRANSISTORS