Permanent and transient radiation effects on thin-oxide (200-A) MOS transistors. Technical report
An approach for hardening metal oxide semiconductor (MOS) transistors to ionizing radiation by reducing the thickness of the gate oxide is presented. It is shown that Si gate, n-channel MOS field-effect transistors with oxides 200 A thick continue to operate in the enhancement mode after irradiation to 1,000,000 rads (Si) with a positive bias applied to the gate during the irradiation. This represents a considerable improvement over conventional thick-oxide (approximately 1000-A) devices, which go into the depletion mode of operation at 100,000 rads (Si). The thin-oxide devices after exposure to pulsed ionizing radiation showed improved performance over that of thick-oxide devices. It was found also that device operation following irradiation depended on the source-drain spacing (Channel length): Shortening the channel length leads to an increased shift of the threshold voltage induced by irradiation. (Author) (GRA)
- Research Organization:
- Harry Diamond Labs., Washington, DC (USA)
- OSTI ID:
- 7118574
- Report Number(s):
- AD-A-030968; HDL-TR-1745
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DIMENSIONS
HARDENING
MOS TRANSISTORS
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TESTING
THICKNESS
TRANSISTORS