Radiation effects in LDD MOS devices
The purpose of this work is to investigate the response of lightly doped drain (LDD) n-channel transistors to ionizing radiation. Transistors were fabricated with conventional (non-LDD) and lightly doped drain (LDD) structures using both standard (non-hardened) and radiation hardened gate oxides. Characterization of the transistors began with a correlation of the total-dose effects due to 10 keV x-rays with Co-60 gamma rays. The authors find that for the gate oxides and transistor structures investigated in this work, 10 keV x-rays produce more fixed-charge guild-up in the gate oxide, and more interface charge than do Co-60 gamma rays. They determined that the radiation response of LDD transistors is similar to that of conventional (non-LDD) transistors. In addition, both standard and radiation-hardened transistors subjected to hot carrier stress before irradiation show a similar radiation response. After exposure to 1.0 x 10/sup 6/ rads(Si), non-hardened transistors show increased susceptibility to hot-carrier graduation, while the radiation-hardened transistors exhibit similar hot-carrier degradation to non-irradiated devices. The authors have demonstrated a fully-integrated radiation hardened process tht is solid to 1.0 x 10/sup 6/ rads(Si), and shows promise for achieving 1.0 x 10/sup 7/ rad(Si) total-dose capability.
- Research Organization:
- United Technologies Microelectronics Center, 1575 Garden of the Gods Road, Colorado Springs, CO (US)
- OSTI ID:
- 7005973
- Report Number(s):
- CONF-8707112-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
CHALCOGENIDES
COBALT 60
COBALT ISOTOPES
DOPED MATERIALS
DOSES
ELECTROMAGNETIC RADIATION
GAMMA RADIATION
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MATERIALS
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
NUCLEI
ODD-ODD NUCLEI
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
THERMAL DEGRADATION
TRANSISTORS
YEARS LIVING RADIOISOTOPES