Total dose radiation-bias effects in laser-recrystallized SOI MOSFET's

Journal Article · Wed Dec 01 00:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336429· OSTI ID:6046259

Davis, G E; Hughes, M L; Kamins, T I

Laser-recrystallized polysilicon over an insulating layer, such as silicon dioxide, provides a new approach for the fabrication of active devices which are dielectrically isolated from the substrate. This paper deals with initial radiation studies for gamma radiation doses from 1 krad to 1 Mrad(Si) on n- and p-channel MOSFET's fabricated in such laser-recrystallized silicon. The n-channel devices were used to investigate the effect of interfacial charge trapping at both the gate oxide/ and underlying oxide/ recrystallized silicon interface. Data on radiation-induced leakage currents and threshold shifts are presented as a function of radiation dose for worst-case irradiation-bias conditions and for various substrate biases during irradiation. Additionally, the effect of a deep boron implant is presented. Although a hardened process was not used to fabricate the MOSFET's, the results show promise for a radiation-hardened alternative to SOS when logic design allows negative substrate biasing and for a radiation-hardened stacked non-planar three-dimensional circuitry.

• Research Organization: Naval Research Lab, Washington, DC 20375
• OSTI ID: 6046259
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. 29:6
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MOSFET
RADIATION EFFECTS
DIELECTRIC MATERIALS
FABRICATION
GAMMA RADIATION
LASERS
LEAKAGE CURRENT
RADIATION DOSES
RADIATION HARDENING
RECRYSTALLIZATION
SILICON OXIDES
THRESHOLD DOSE
CHALCOGENIDES
CURRENTS
DOSES
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
HARDENING
IONIZING RADIATIONS
MATERIALS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems