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In situ scanning tunneling microscopy of copper deposition with benzotriazole

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2085965· OSTI ID:7164192
;  [1]
  1. Lawrence Berkeley Lab., Dept. of Chemical Engineering, Univ. of California at Berkeley, Berkeley, CA (US)

In this paper, the submicron topography of Cu deposits is studied with scanning tunneling microscopy to investigate the effect of benzotriazole in the initial stages of deposition. The presence of benzotriazole results in a marked increase in over-potential for the deposition. It is found to eliminate the preferential growth of specific crystallographic planes and the formation of crystal facets. The number density of nuclei, determined from Fourier transforms of the surface profiles of 7 nm thick films, is found to increase with increasing overpotential of the deposition but is independent of the presence of the inhibitor.

DOE Contract Number:
AC03-76SF00098
OSTI ID:
7164192
Journal Information:
Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 138:8; ISSN JESOA; ISSN 0013-4651
Country of Publication:
United States
Language:
English