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U.S. Department of Energy
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Spectroscopic studies of hydrogenated amorphous silicon: Annual contract report, 15 March 1985-15 March 1986

Technical Report ·
DOI:https://doi.org/10.2172/7158361· OSTI ID:7158361
This annual report covers work on fundamental structural and electronic studies of hydrogenated films of Si and Si-Ge alloys and on characterizing such materials for other research groups. Specific objectives were (1) to compare light soaking experiments of films prepared by glow discharge and photochemical vapor deposition to gain information about the photoinduced defect density; (2) to perform nuclear magnetic resonance measurements on a sample grown by atmospheric pressure chemical vapor deposition for comparison; (3) to investigate the ESR and photoluminescence properties of doped a-Si:H superlattices to characterize the effect of substrate temperature on material quality; (4) to study Si/Ge alloys to identify the dominant electronic defect in these materials; and (5) to develop a sample/detector suitable for studying time-resolved, nonradiative processes in an a-Si:H film. Further study of this alloy film for different values of Ge content is recommended.
Research Organization:
Naval Research Lab., Washington, DC (USA)
DOE Contract Number:
AC02-83CH10093; AI02-80CS83116
OSTI ID:
7158361
Report Number(s):
SERI/STR-211-3045; ON: DE87001108
Country of Publication:
United States
Language:
English