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U.S. Department of Energy
Office of Scientific and Technical Information

Research on high-efficiency, stacked, multi-junction, amorphous silicon alloy thin-film solar cell: Semiannual subcontract report; 15 October 1985 - 30 April 1986

Technical Report ·
DOI:https://doi.org/10.2172/6773715· OSTI ID:6773715

This report describes work performed to investigate and develop high-efficiency, multijunction amorphous silicon alloy thin-film solar cells. Specifically, a-Si:H and a-(Si,Ge):H alloys have been deposited and characterized chemically, structurally, optically, and electronically. Also, a-Si:H/a-(Si,Ge):H high-efficiency tandem solar cells have been fabricated and analyzed. In this contract period, a plasma-isolated, two-chamber, hot-wall glow discharge reactor began operating. Good quality a-Si:H layers were grown. A chemical vapor deposition (CVD) pyrolytic reactor for depositing SnO/sub 2/:F layers on glass was also used. Single-junction a-Si:H cells up to 9.1% in efficiency were fabricated, as were multijunction a-Si:H/a-(Si,Ge):H cells up to 7.2% in efficiency.

Research Organization:
Spire Corp., Bedford, MA (USA); Solar Energy Research Inst., Golden, CO (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6773715
Report Number(s):
SERI/STR-211-3104; ON: DE87001142
Country of Publication:
United States
Language:
English