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U.S. Department of Energy
Office of Scientific and Technical Information

Research on high-efficiency, stacked, multijunction, amorphous silicon alloy thin-film solar cells. A semiannual subcontract progress report, 1 October 1984-15 May 1985

Technical Report ·
DOI:https://doi.org/10.2172/6457152· OSTI ID:6457152
This technical progress report to the Solar Energy Research Institute covers work on high-efficiency, stacked, multijunction amorphous silicone alloy thin-film solar cells. Material growth was begun in a multisector reactor. The a-Si:H films grown in this reactor were very high quality, as shown in their high ratio of photo-to-dark conductivity and very low dark conductivity. High-band-gap a-Si:H films were achieved by using H etching of films during growth. H/sub 2/ dilution in the plasma led to a sharpening of the valence band tail in both a-Si:H and a-(Si,Ge):H films. No SiH/sub 2/ bonds were observed after Ge was added to the a-Si:H. Experiments were begun to develop a two-level, stable back contact to a-Si:H. Preliminary results indicate that a Cr/Pd contact may be stable and moderately reflecting, but the best reflection was obtained with Ag. Mo appears to be a suitable, stable contact to SnO/sub 2/. A critical parameter in achieving 8.5% efficient a-Si:H devices was plasma-cleaning between deposition of the p- and i-layers. 6.5% efficient a-(Si,Ge):H devices were also grown. Two types of tandem cells were fabricated.
Research Organization:
Spire Corp., Bedford, MA (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6457152
Report Number(s):
SERI/STR-211-2845; ON: DE85016875
Country of Publication:
United States
Language:
English