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U.S. Department of Energy
Office of Scientific and Technical Information

Research on high-efficiency, stacked, multijunction, amorphous silicon alloy thin-film solar cells: Final subcontract report, 11 October 1983-30 October 1986

Technical Report ·
DOI:https://doi.org/10.2172/5493723· OSTI ID:5493723
This report covers the third year of a three-year project to develop high-efficiency, stable, multijunction amorphous silicon alloy solar cells. It describes new deposition techniques to obtain pinhole-free, a-Si:H alloy films by avoiding dust formation in the plasma; the deposition of low-absorptance, textured SnO/sub 2/ layers by thermal CVD of Sn(CH/sub 3/)/sub 4/; a more stable, high-reflectance Ti/Ag back contact; the application of the new deposition techniques to achieve efficiencies of 10.5%, 10.1%, and 9.4% for a-Si:H p-i-n devices; the development of a-(Si,Ge):H cells with efficiencies from 5.4% for a-(Si,Ge):H cells to 7.5% for graded-bandgap cells; and the development of a-Si/a-(Si,Ge) tandem cells with 6.5% and 7.2% efficiencies. 18 refs., 60 figs., 49 tabs.
Research Organization:
Spire Corp., Bedford, MA (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5493723
Report Number(s):
SERI/STR-211-3231; ON: DE88001108
Country of Publication:
United States
Language:
English