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U.S. Department of Energy
Office of Scientific and Technical Information

Laser techniques for studying chemical vapor deposition

Conference ·
DOI:https://doi.org/10.1117/12.22092· OSTI ID:7155803

Chemical vapor deposition (CVD) is widely used to produce thin films for microelectronics, protective coatings and other materials processing applications. Despite the large number of applications, however, little is known about the fundamental chemistry and physics of most CVD processes. CVD recipes have generally been determined empirically, but as process requirements become more stringent, a more basic understanding will be needed to improve reactor design and speed process optimization. In situ measurements of the reacting gas are important steps toward gaining such an understanding, both from the standpoint of characterizing the reactor and testing models of a CVD process. Our work, a coordinated program of experimental and theoretical research in the fundamental mechanisms of CVD, illustrates the application of laser techniques to the understanding of a CVD system. We have used a number of laser-based techniques to probe CVD systems and have compared our measurements with predictions from computer models, primarily for the silane CVD system. The silane CVD model solves the two-dimensional, steady-state boundary layer equations of fluid flow coupled to 26 elementary chemical reactions describing the thermal decomposition of silane and the subsequent reactions of intermediate species that result in the deposition of a silicon film.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
AC04-76DP00789
OSTI ID:
7155803
Report Number(s):
SAND-89-2860C; CONF-900656--2; ON: DE90012921
Country of Publication:
United States
Language:
English