Mechanisms of silicon CVD (chemical vapor deposition)
Conference
·
OSTI ID:6370001
The microelectronics and solar-cell industries rely heavily on silicon thin films. Such films are generally produced via chemical vapor deposition (CVD) from silanes or chlorosilanes. We describe a coordinated program of experimental and theoretical research into the fundamental mechanisms of CVD. The experimental program uses laser spectroscopic techniques for in situ measurements during CVD. The theoretical program consists of a computer model that contains a detailed description of the coupled fluid mechanics and gas-phase chemical kinetics in silane CVD.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6370001
- Report Number(s):
- SAND-87-1341C; CONF-870760-1; ON: DE87010474
- Country of Publication:
- United States
- Language:
- English
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