Low-threshold GaAs/AlGaAs graded-index separate confinement heterostructure lasers grown by molecular beam epitaxy on oxide-masked Si substrates

Journal Article · Mon Jun 18 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102870· OSTI ID:7149737

Burns, G F; Blanck, H; Fonstad, C G ^[1]

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1. Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (US)

Low-threshold GaAs/AlGaAs lasers have, for the first time, been grown selectively on 10 {mu}m stripe openings patterned in oxide on Si substrates. Lateral current confinement provided by side facets reduces edge leakage, and results in threshold currents as low as 75 mA for a 10 {mu}m by 210 {mu}m device, a nearly two-fold improvement over comparable etched ridge waveguide lasers. Spectrum measurements show single longitudinal mode emission near 850 nm. This adaptation of selective heteroepitaxial growth for lateral current confinement of AlGaAs/GaAs lasers on Si substrates, adopted from similar work on GaAs substrates, offers potential for significant threshold current reductions of lasers integrable with Si.

• OSTI ID: 7149737
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:25; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CURRENTS
DESIGN
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MOLECULAR BEAM EPITAXY
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SOLID STATE LASERS
THRESHOLD CURRENT