Double-heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built-in index guiding by selective-area molecular beam epitaxy
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA (USA) Electronics Research Laboratory, University of California, Berkeley, CA (USA)
We report successful fabrication of GaAs/Al{sub 0.26}Ga{sub 0.74}As double-heterostructure laser diodes grown on patterned Si substrates by molecular beam epitaxy. The patterned substrates consist of exposed Si stripes with widths ranging from 9 to 70 {mu}m and surrounded by 900 A of SiN films on both sides. Oxide-defined contact stripe lasers with stripe widths ranging from 3 to 50 {mu}m (corresponding to each of the SiN-defined stripe windows) were fabricated. Reduction of laser threshold current densities compared to similar lasers grown on nonpatterned Si substrates is observed, and is attributed to current confinement effect by the high-resistivity polycrystalline GaAs/AlGaAs films surrounding the active devices. From the measurements on the longitudinal mode spectrum and far-field patterns, lateral index guiding is also observed for the 10-{mu}m-wide selective-area grown laser.
- OSTI ID:
- 6972845
- Journal Information:
- Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:11; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTALS
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY
EPITAXY
FABRICATION
FAR INFRARED RADIATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HETEROJUNCTIONS
HIGH TEMPERATURE
INFRARED RADIATION
JUNCTIONS
LASERS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
POLYCRYSTALS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SOLID STATE LASERS
SUBSTRATES
THIN FILMS
THRESHOLD ENERGY