Photoluminescence studies of selective-area molecular beam epitaxy of GaAs film on Si substrate

Journal Article · Mon Jan 18 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99523· OSTI ID:5618199

Lee, H P; Wang, S; Huang, Y; Yu, P

GaAs films have been grown on Si substrates patterned with SiN by molecular beam epitaxy. The pattern consists of bare Si stripe of width ranging from 10 to 100 ..mu..m surrounded by SiN on both sides and a reference area of bare Si. 77 K photoluminescence (PL) spectrum and intensity are measured on the single crystalline GaAs films grown on these stripes and the reference area. For 1.5- and 3-..mu..m-thick films, PL intensity from the 10 ..mu..m stripe shows 140% and 75% increase over the reference area, respectively. This remarkable increase in the PL intensity is believed due to the reduction of dislocations inside the window area. The improvement in the optical quality makes selective-area molecular beam epitaxy a very attractive technique for the fabrication of optical devices on Si substrate.

• Research Organization: Department of Electrical Engineering and Computer Sciences and Electronics Research Laboratory, University of California, Berkeley, California 94720
• OSTI ID: 5618199
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LINE DEFECTS
LUMINESCENCE
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PNICTIDES
THIN FILMS